Fraunhofer IAF enhances functionality of GaN power ICs with integrated sensors as part of GaNIAL project

Published: 7/05/2019
Fraunhofer IAF enhances functionality of GaN power ICs with integrated sensors as part of GaNIAL project
Source: WWW.SEMICONDUCTOR-TODAY.COM

Fraunhofer Institute for Applied Solid State Physics (IAF) of Freiburg, Germany says that it has significantly enhanced the functionality of gallium nitride (GaN) power ICs for voltage converters by integrating current and temperature sensors onto a GaN-based chip, along with power transistors, freewheeling diodes and gate drivers. The development could pave the way for more compact and efficient

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